5SHY5055L0002 3BHE019719R0101 GVC736BE101 ABB IGCT module

5SHY5055L0002 3BHE019719R0101 GVC736BE101 ABB IGCT module

5SHY5055L0002 3BHE019719R0101 GVC736BE101 ABB IGCT module  the wafer from the radial outside inevitably means leading it through the cathode pole-piece thatconstitutes the principal electrode and thermal contact on the cathode side. The gate vias introduceobstructions in both the electrical and thermal circuits of the 91 mm device. In contrast, the gate contactof the 94 mm wafer is placed outside the device’s active area, eliminating obstructions in the cathodecontact and decreasing the thermal resistance. The space for the device’s active area is also improved bymore than the area increase of 6-7 % that results from changing the laser cut diameter from 91 to 94 mm.A more effective design, together with improved precision in production that reduces the tolerancerequired, allows the 94 mm wafer to enlarge the active GCT area from 42 cm2 to 51.4 cm2, an increase of 22%.There are two main advantages with an outer gate contact arrangement. Firstly, the outside of the waferis as close to the gate unit as possible, which decreases the inductive impedance of the gate leadsconnecting the wafer and the gate unit. Secondly, the gate metallization on the wafer constitutes the gatecontact to all segments on the wafer. The shape of this conductor is beneficial for an outer gate contact: itincreases in cross-sectional area as current increases from the inside to the outside of the wafer. Theouter gate contact, however, has two disadvantages for the gate circuit impedance. Most importantly, thegate metallization must carry the entire gate current through its tangential cross-section next to the gatecontact. For a half-radius gate contact, the inner and outer halves of the gate metallization make up aparallel connection, so that each half carries a portion of the gate current. The second disadvantage is thatthe maximal distance between thyristor segments and the gate contact increases by approximately afactor of two, raising the inductive impedance load on the most remote segments. In summary, the outergate ring is a choice that is expected to increase the resistive impedance of the gate metallization on onehand and decrease the inductive impedance on the other hand.

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5SHY5055L0002 3BHE019719R0101 GVC736BE101 ABB IGCT module

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