3BHB016120R0002 ABB 5SHX1960L0006 Medium and high voltage variable frequency IGCT module

3BHB016120R0002 ABB 5SHX1960L0006 Medium and high voltage variable frequency IGCT moduleThe gate commutated thyristor (GCT) is a new thyristor device, which is based on the GTO structure. When a GTO changes from conduction to blocking state (turn-off transition), it goes through an indeterminate state where it is neither a thyristor nor a transistor. This state is sometimes referred to as the GTO mode. This mode requires snubber circuits to reduce the rate at which voltage is reapplied to the circuit. The GCT is a device that does not have the GTO mode and, consequently, there is no need for snubber circuits. The idea behind the GCT is to commutate the entire cathode current to the gate at turn-off. By doing this a smooth transition from thyristor (latching operation) to transistor operation can be achieved. The GCT is a gate-controlled turn-off switch like a transistor but conducts like a thyristor with the lowest conduction losses. A GCT can be turned on and turned off from its gate as a GTO but with lower conduction losses and higher dv/dt ratings voltage. Since the GCT can withstand high dv/dt ratings there is no necessity for snubber protection circuits for most applications.

3BHB016120R0002 ABB 5SHX1960L0006 Medium and high voltage variable frequency IGCT module

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