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S-053M 3BHB012897R0003 ACS 6000 Medium Voltage Drive Configuration IGCT Module
Brand:ABB |
Item NO:S-053M |
Condition: In stock, brand new/Used |
Warranty: 365 days |
Payment:T/T 30% deposit, 70% balance |
www.szcxdcs.com |
+86 15359298293
Product type: ACS 6000 Medium Voltage Driver |
manufacturer: ABB |
model: S-053M |
Part number: 3BHB012897R0003 |
Features: Power Electronics Building Block (PEBB), a phase branch of a three-level voltage source inverter (VSI) topology, configured to act as an AC-DC or DC-AC converter |
The S-053M operating conditions of the Power Electronic Building Block (PEBB) and the IGCT / IGBT simulation results are presented in tables 1 to 3. They are calculated based on a three phase 3-level topology with 12 controlled semiconductors (IGCT and IGBT, respectively) and 12 diodes in free-wheeling position and 6 diodes in NPC position. It is clear that the power density achieved with single devices per converter position is double in the case of the IGCT design. A high power factor PF was selected close to 1 to minimise the losses of the free-wheeling diodes. In any case for power factors in the range of 0.85 to 0.95 the contribution of these diodes to the overall losses for inverter mode is minimal, i.e. in the range of few hundreds of watts in total at maximum. Similar considerations apply for the switching losses of the controlled element in position 2, be S-053M an IGBT or an IGCT. The switch in that position experiences virtually no switching losses accounting for its duty cycle which is continuously conducting and commutates to 0 current under zero voltage. This is also due to the NPC diode operation applying 0 voltage across position 2 of an active switch. The current of devices in position 2 exhibits a smooth continuous shape. The effect of a highly inductive power factor and increased switching frequency results in appearance of very few and negligible switching losses. Figure 3 shows scope waveforms of IGCT2 taken during the simulation which indicate
this behaviour. Proportionally the losses in the semiconduc tors are much lower in the case of the IGCT converter and even with the estimation of the additional losses in the clamp circuit
with the higher clamp inductor Li option they are still lower compared to the IGBT based converter. S-053M is also interesting to observe the pure losses in the controlled semiconductors.
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