ABB 3BHB021400R0002 5SHY3545L0014 IGCT module thyristor

ABB 3BHB021400R0002 5SHY3545L0014 IGCT module thyristor

Product Name: IGCT thyristor module

ABB 3BHB021400R0002 5SHY3545L0014 IGCT module thyristor  to achieve such a high load capability, a number of improvements to the HPT-IGCT are being implemented with a targeted operating tem- perature increase from 125 °C to 140 °C. In the silicon the corru-gated p-base doping profiles introduced in the HPT-IGCT have been optimized to allow for full SOA exploitation over the whole tempera-ture range from 0 °C to 140 °C. Further, also internal interfaces like the metallization on the wafer have been improved to achieve a higher thermo-mechanical wear resistance. These measures allow for the higher temperature excursions of the device under intermittent opera- tion at 140 °C. The verification of these improvements has started and the first results look very promising.The reverse blocking IGCT Certain AC applications and current source inverters (CSIs) require a switching device that is symmetrically blocking. Although this could be realized by using an asymmetric IGCT connected in series with a fast diode, the preferred solution is a symmetric IGCT. Since the per-formance requirements and some modes of operation of symmetric IGCTs considerably differ from asymmetric IGCTs, there is quite much learning needed for their realization. ABB has taken the challenge and realized the first symmetric IGCTs that are undergoing extensive testing. A new product lineup is planned with a voltage rating of 6,500 V, ideally suited for a 2,300 V line voltage

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ABB 3BHB021400R0002 5SHY3545L0014 IGCT module thyristor