ABB 3BHE014105R0001 5SHY35L4510 thyristor IGCT module

ABB 3BHE014105R0001 5SHY35L4510 thyristor IGCT module

Product Name: IGCT thyristor module

ABB 3BHE014105R0001 5SHY35L4510 thyristor IGCT module  there is a clear trend towards multi-level topologies in many power electronics applications. Multi-level converters are operating at fairly low switching frequencies but at the same time they require high current carrying capabilities and/or high efficiency. Due to the IGCT’s inherent low conduction loss thyristor properties and the hard switched functionality the IGCT is predestined for such applications.Figure 5 shows how a 4,500 V, 91 mm IGCT can be tuned to different application requirements and compares with a correspondingstate-of-the-art IGBT press-pack module. Since there is a certain amount of freedom in selecting the device voltage for a multilevel system a number of simulations and experiments have been performed to see what performance can beachieved with the goal of approaching an on-state voltage drop of 1 V. The results are summarized in figure 6 and show designers how multi-level converters can be optimized with respect to minimum totalinverter losses for a given topology, system voltage and current level.Increased voltage ratings From table 1 it can be seen that 3-level inverters for line voltages of 6 to 7.2 kV without series connected IGCTs would be possible if IGCT voltage ratings of up to 10 kV were available.A 10 kV IGCT prototype has been produced to prove that IGCTs with higher voltage ratings are possi-ble and its turn-off wave form is shown in figure 7. Since the high blocking voltage requires quite thick silicon which translates into fairly high switching and conduction loss-es, these devices target applications as drives for machines with moderate speeds.

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ABB 3BHE014105R0001 5SHY35L4510 thyristor IGCT module