ABB 5SHX1960L0006 3BHB016120R0002 3BHE019719R0101 GVC736BE101

 In regards of the high power 5SHX1960L0006 applications with series con– nected devices the following improvements due to the IGCT technology are of importance − the storage time of the IGCT is reduced to 1 µs and therefore defining the base for the simple and robust series connection of IGCTs − the dv/dt-snubber and therefore inverter losses can be considerably reduced or negelected due to the completely homogenous operation of the IGCT. − the gate drive power is considerably reduced due to the lower gate turn-off charge − the gate drive costs are reducedBased on further innovations in the semiconductor tech– nology the 2nd generation IGCT based on a buffer-layer, transparent anode design has been developed. In the new design the electrical field in the blocking pn-junction is rather a constant. This is achieved with the buffer layer in the device. With this design the same blocking voltage can be achieved with a thinner silicon, resulting in a more efficient device.